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| TC4423 TC4424 TC4425 3A DUAL HIGH-SPEED POWER MOSFET DRIVERS FEATURES s s s s s s High Peak Output Current .................................. 3A Wide Operating Range .......................... 4.5V to 18V High Capacitive Load Drive Capability ......................... 1800 pF in 25nsec Short Delay Times ............................. < 40nsec Typ Matched Rise/Fall Times Low Supply Current -- With Logic "1" Input ................................ 3.5 mA -- With Logic "0" Input ................................ 350 A Low Output Impedance ............................. 3.5 Typ Latch-Up Protected . Will Withstand 1.5A Reverse Current Logic Input Will Withstand Negative Swing Up to 5V ESD Protected .................................................... 4 kV Pinouts Same as TC1426/27/28; TC4426/27/28 1 GENERAL DESCRIPTION The TC4423/4424/4425 are higher output current versions of the new TC4426/4427/4428 buffer/drivers, which, in turn, are improved versions of the earlier TC426/427/428 series. All three families are pin-compatible. The TC4423/ 4424/4425 drivers are capable of giving reliable service in far more demanding electrical environments than their antecedents. Although primarily intended for driving power MOSFETs, the TC4423/4424/4425 drivers are equally well-suited to driving any other load (capacitive, resistive, or inductive) which requires a low impedance driver capable of high peak currents and fast switching times. For example, heavily loaded clock lines, coaxial cables, or piezoelectric transducers can all be driven from the TC4423/4424/4425. The only known limitation on loading is the total power dissipated in the driver must be kept within the maximum power dissipation limits of the package. 2 3 4 5 6 7 s s s s s ORDERING INFORMATION Part No. TC4423COE TC4423CPA TC4423EOE TC4423EPA TC4423MJA TC4424COE TC4424CPA TC4424EOE Package Temperature Range Part No TC4424EPA TC4424MJA TC4425COE TC4425CPA TC4425EOE TC4425EPA TC4425MJA 16-Pin SOIC (Wide) 0C to +70C 8-Pin Plastic DIP 0C to +70C 16-Pin SOIC (Wide) - 40C to +85C 8-Pin Plastic DIP - 40C to +85C 8-Pin CerDIP - 55C to +125C 16-Pin SOIC (Wide) 8-Pin Plastic DIP 16-Pin SO Wide 0C to +70C 0C to +70C - 40C to +85C Package 8-Pin Plastic DIP 8-Pin CerDIP 16-Pin SO Wide 8-Pin Plastic DIP 16-Pin SO Wide 8-Pin Plastic DIP 8-Pin CerDIP Temperature Range - 40C to +85C - 55C to +125C 0C to +70C 0C to +70C - 40C to +85C - 40C to +85C - 55C to +125C FUNCTIONAL BLOCK DIAGRAM INVERTING VDD 300 mV OUTPUT INPUT 4.7V NONINVERTING TC4423 DUAL INVERTING TC4424 DUAL NONINVERTING TC4425 ONE INV., ONE NONINV. GND EFFECTIVE INPUT C = 20 pF (EACH INPUT) NOTES: 1. TC4425 has one inverting and one noninverting driver. 2. Ground any unused driver input. TC4423/4/5-6 10/21/96 8 4-237 TELCOM SEMICONDUCTOR, INC. 3A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC4423 TC4424 TC4425 ABSOLUTE MAXIMUM RATINGS* Supply Voltage ......................................................... +22V Input Voltage, IN A or IN B ...... VDD + 0.3V to GND - 5.0V Maximum Chip Temperature ................................. +150C Storage Temperature Range ................ - 65C to +150C Lead Temperature (Soldering, 10 sec) ................. +300C Package Thermal Resistance CerDIP RJ-A ................................................ 150C/W CerDIP RJ-C .................................................. 55C/W PDIP RJ-A ................................................... 125C/W PIN CONFIGURATIONS 16-Pin SO Wide NC IN A NC GND GND NC IN B NC 1 2 3 4 5 6 7 8 TC4423 TC4424 TC4425 16 15 14 13 12 11 10 9 4423 NC 4424 NC PDIP RJ-C ..................................................... 45C/W SOIC RJ-A ................................................... 155C/W SOIC RJ-C ..................................................... 75C/W Operating Temperature Range C Version ............................................... 0C to +70C I Version ............................................ - 25C to +85C E Version ........................................... - 40C to +85C M Version ........................................ - 55C to +125C Package Power Dissipation (TA 70C) Plastic DIP ...................................................... 730mW CerDIP ............................................................800mW SOIC ............................................................... 470mW 4425 NC 8-Pin DIP NC 1 IN A 2 GND 3 IN B 4 TC4423 TC4424 TC4425 4423 8 NC 4424 NC 4425 NC OUT A OUT A OUT A OUT A OUT A OUT A VDD VDD VDD VDD VDD VDD 7 OUT A OUT A OUT A 6 VDD VDD VDD 5 OUT B OUT B OUT B OUT B OUT B OUT B OUT B OUT B OUT B NC NC NC NC = NO CONNECTION NOTE: Duplicate pins must both be connected for proper operation. ELECTRICAL CHARACTERISTICS: TA = +25C with 4.5V VDD 18V, unless otherwise specified. Symbol Input VOH VIL IIN Logic 1 High Input Voltage Logic 0 Low Input Voltage Input Current High Output Voltage Low Output Voltage Output Resistance, High Output Resistance, Low Peak Output Current Latch-Up Protection Withstand Reverse Current Rise Time Fall Time Delay Time Delay Time Power Supply Current 2.4 -- -1 VDD - 0.025 -- -- -- -- 1.5 -- -- -- -- -- 2.8 3.5 3 -- -- 0.8 1 -- 0.025 5 5 -- -- V V A V V A A Parameter Test Conditions Min Typ Max Unit 0V VIN VDD Output VOH VOL RO RO IPK IREV IOUT = 10 mA, VDD = 18V IOUT = 10 mA, VDD = 18V Duty Cycle 2% t 300 sec Figure 1, CL = 1800 pF Figure 1, CL = 1800 pF Figure 1, CL = 1800 pF Figure 1, CL = 1800 pF VIN = 3V (Both Inputs) VIN = 0V (Both Inputs) Switching Time (Note 1) tR tF tD1 tD2 -- -- -- -- -- -- 23 25 33 38 1.5 0.15 35 35 75 75 2.5 0.25 nsec nsec nsec nsec mA mA Power Supply IS 4-238 TELCOM SEMICONDUCTOR, INC. 3A DUAL HIGH-SPEED POWER --MOSFET DRIVERS TC4423 TC4424 TC4425 ELECTRICAL CHARACTERISTICS (Cont.): Over operating temperature range with 4.5V VDD 18V, unless otherwise specified. Symbol Input VIH VIL IIN Logic 1 High Input Voltage Logic 0 Low Input Voltage Input Current High Output Voltage Low Output Voltage Output Resistance, High Output Resistance, Low Peak Output Current Latch-Up Protection Withstand Reverse Current Rise Time Fall Time Delay Time Delay Time Power Supply Current 2.4 -- - 10 VDD - 0.025 -- -- -- -- 1.5 -- -- -- -- -- 3.7 4.3 3 -- -- 0.8 10 -- 0.025 8 8 -- -- V V A V V A A 1 Parameter Test Conditions Min Typ Max Unit 2 3 4 5 6 7 0V VIN VDD Output VOH VOL RO RO IPK IREV IOUT = 10 mA, VDD = 18V IOUT = 10 mA, VDD = 18V Duty Cycle 2% t 300 sec Figure 1, CL = 1800 pF Figure 1, CL = 1800 pF Figure 1, CL = 1800 pF Figure 1, CL = 1800 pF VIN = 3V (Both Inputs) VIN = 0V (Both Inputs) Switching Time (Note 1) tR tF tD1 tD2 -- -- -- -- -- -- 28 32 32 38 2 0.2 60 60 100 100 3.5 0.3 nsec nsec nsec nsec mA Power Supply IS NOTE: 1. Switching times guaranteed by design. Test Circuit VDD = 16V 1 F WIMA MKS-2 0.1 F CERAMIC Test Circuit VDD = 16V 1 F WIMA MKS-2 0.1 F CERAMIC INPUT 1 2 TC4423 (1/2 TC4425) OUTPUT CL = 1800pF INPUT 1 2 TC4424 (1/2 TC4425) OUTPUT CL = 1800pF INPUT: 100 kHz, square wave, tRISE = tFALL 10 nsec +5V INPUT 0V 16V OUTPUT 0V 10% tD1 90% INPUT: 100 kHz, square wave, tRISE = tFALL 10 nsec +5V INPUT 0V 10% 90% 90% tF tD2 tR 90% 16V tD1 OUTPUT 0V 90% tR 10% 90% tD2 10% tF 10% 10% Figure 1. Inverting Driver Switching Time Figure 2. Noninverting Driver Switching Time 4-239 8 TELCOM SEMICONDUCTOR, INC. 3A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC4423 TC4424 TC4425 TYPICAL CHARACTERISTICS Rise Time vs. Supply Voltage 100 4700 pF 80 tRISE (nsec) tFALL (nsec) Fall Time vs. Supply Voltage 100 4700 pF 80 3300 pF 2200 pF 40 60 3300 pF 60 40 2200 pF 20 470 pF 0 1500 pF 1000 pF 20 470 pF 0 1500 pF 1000 pF 4 6 8 10 12 VDD 14 16 18 4 6 8 10 12 VDD 14 16 18 Rise TIme vs. Capacitive Load 100 100 Fall TIme vs. Capacitive Load 5V 80 tRISE (nsec) tFALL (nsec) 80 5V 60 10V 15V 60 10V 15V 40 40 20 20 0 100 1000 C LOAD (pF) 10,000 0 100 1000 CLOAD (pF) 10,000 Rise and Fall Times vs. Temperature 32 30 28 TIME (nsec) Propagation Delay vs. Input Amplitude 100 C LOAD = 2200 pF DELAY TIME (nsec) C LOAD = 2200 pF t FALL 80 t D1 V DD = 10V 26 24 22 20 t RISE t RISE 60 40 t FALL 5 25 45 65 85 105 125 20 t D2 18 -55 -35 -15 0 1 2 3 4 TA (C) 567 INPUT (V) 8 9 10 11 12 4-240 TELCOM SEMICONDUCTOR, INC. 3A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC4423 TC4424 TC4425 TYPICAL CHARACTERISTICS (Cont.) Propagation Delay Time vs. Supply Voltage 50 C LOAD = 2200 pF 1 Delay Time vs. Temperature 50 C LOAD = 2200 pF 2 3 45 DELAY TIME (nsec) DELAY TIME (nsec) 40 35 30 25 20 4 6 8 10 12 VDD 14 16 18 tD2 tD2 45 tD2 40 35 30 25 20 -55 -35 -15 tD2 5 25 45 TA (C) 65 85 105 125 Quiescent Current vs. Supply Voltage 1.4 TA = +25C 1 IQUIESCENT (mA) Quiescent Current vs. Temperature 1.2 IQUIESCENT (mA) 4 5 BOTH INPUTS = 1 1.0 0.8 0.6 0.4 0.2 INPUTS = 0 5 25 45 TA (C) 65 85 105 125 INPUTS = 1 0.1 BOTH INPUTS = 0 0.01 4 6 8 10 VDD 12 14 16 18 0.0 -55 -35 -15 Output Resistance (Output High) vs. Supply Voltage 14 12 WORST CASE @ TJ = +150C RDS(ON) () RDS(ON) () Output Resistance (Output Low) vs. Supply Voltage 14 12 WORST CASE @ TJ = +150C 10 8 6 4 2 TYP @ TA = +25C 6 7 10 8 6 4 2 4 6 8 10 VDD 12 14 16 18 TYP @ TA = +25C 4 6 8 10 12 VDD 14 16 18 8 4-241 TELCOM SEMICONDUCTOR, INC. 3A DUAL HIGH-SPEED MOSFET DRIVERS TC4423 TC4424 TC4425 SUPPLY CURRENT CHARACTERISTICS (Load on Single Output Only) Supply Current vs. Capacitive Load 60 VDD = 18V 50 634 kHz 50 60 VDD = 18V 3300 pF 1000 pF Supply Current vs. Frequency ISUPPLY (mA) 30 355 kHz 20 200 kHz 10 112.5 kHz 0 100 63.4 kHz 35.5 kHz 20 kHz 1000 CLOAD (pF) 10,000 ISUPPLY (mA) 40 40 30 20 10 0 10,000 pF 100 pF 10 100 FREQUENCY (kHz) 1000 Supply Current vs. Capacitive Load 90 80 70 VDD = 12V 2 MHz 90 80 70 Supply Current vs. Frequency V DD = 12V 3300 pF 1000 pF ISUPPLY (mA) 60 50 1.125 MHz 40 30 20 10 0 100 1000 CLOAD (pF) 634 kHz 355 kHz 200 kHz 112.5 kHz 63.4 kHz 20 kHz 10,000 ISUPPLY (mA) 60 50 40 30 20 10 0 10 100 FREQUENCY (kHz) 1000 10,000 pF 100 pF Supply Current vs. Capacitive Load 120 VDD = 6V 100 100 120 Supply Current vs. Frequency 4700 pF V DD = 6V 10,000 pF ISUPPLY (mA) 1.125 MHz 60 3.55 MHz 40 2 MHz 20 0 100 634 kHz 355 kHz 112.5 kHz 20 kHz 1000 CLOAD (pF) 10,000 ISUPPLY (mA) 80 80 2200 pF 60 1000 pF 40 20 0 10 100 pF 100 FREQUENCY (kHz) 1000 4-242 TELCOM SEMICONDUCTOR, INC. 3A DUAL HIGH-SPEED MOSFET DRIVERS TC4423 TC4424 TC4425 TC4423 Crossover Energy 10-8 8 6 MAX. POWER (mW) 1 Thermal Derating Curves 1400 8 Pin DIP 1200 16 Pin SOIC 1000 800 8 Pin CerDIP 600 400 200 2 3 4 2 A * sec 10-9 8 6 4 2 10-10 0 2 4 6 8 VIN NOTE: The values on this graph represent the loss seen by both drivers in a package during one complete cycle. For a single driver, divide the stated values by 2. For a single transition of a single driver, divide the stated value by 4. 10 12 14 16 18 0 0 20 40 60 80 100 120 140 AMBIENT TEMPERATURE (C) 4 5 6 7 *Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under Absolute Maximum Ratings (See page 2) may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to Absolute Maximum Rating Conditions for extended periods may affect device reliability. 8 TELCOM SEMICONDUCTOR, INC. 4-243 |
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